FDZ663P

Fairchild Semiconductor

Product No:

FDZ663P

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4-WLCSP (0.8x0.8)

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Description:

FDZ663P - FDZ663P - MOSFET P-CHA

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	525 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	8.2 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	134mOhm @ 2A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 250µA
Supplier Device Package	4-WLCSP (0.8x0.8)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.3W (Ta)
Series	PowerTrench®
Package / Case	4-XFBGA, WLCSP
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Vgs (Max)	±8V
Drive Voltage (Max Rds On, Min Rds On)	1.5V, 4.5V
Package	Bulk