FQA10N80_F109

onsemi

Product No:

FQA10N80_F109

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TO-3P

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Description:

MOSFET N-CH 800V 9.8A TO3P

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	71 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.05Ohm @ 4.9A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	240W (Tc)
Series	QFET®
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	9.8A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	FQA1