FQA19N60

onsemi

Product No:

FQA19N60

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Package:

TO-3PN

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	90 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	380mOhm @ 9.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	TO-3PN
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	300W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	18.5A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk