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FQI11P06TU

Fairchild Semiconductor

Product No:

FQI11P06TU

Package:

I2PAK (TO-262)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 60V 11.4A I2PAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 175mOhm @ 5.7A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I2PAK (TO-262)
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3.13W (Ta), 53W (Tc)
Series QFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 11.4A (Tc)
Vgs (Max) ±25V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube