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FQI7N80TU

onsemi

Product No:

FQI7N80TU

Manufacturer:

onsemi

Package:

I2PAK (TO-262)

Batch:

-

Datasheet:

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Description:

MOSFET N-CH 800V 6.6A I2PAK

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 1.5Ohm @ 3.3A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package I2PAK (TO-262)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 3.13W (Ta), 167W (Tc)
Series QFET®
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number FQI7N80