FQN1N50CTA

Fairchild Semiconductor

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FQN1N50CTA

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TO-92-3

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Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	6.4 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	6Ohm @ 190mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-92-3
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	890mW (Ta), 2.08W (Tc)
Series	QFET®
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	380mA (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk