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FQPF2N80YDTU

Fairchild Semiconductor

Product No:

FQPF2N80YDTU

Package:

TO-220F-3 (Y-Forming)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 800V 1.5A TO220F-3

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 550 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 6.3Ohm @ 750mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220F-3 (Y-Forming)
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 35W (Tc)
Series QFET®
Package / Case TO-220-3 Full Pack, Formed Leads
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk