FQPF7N65CYDTU-T

onsemi

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FQPF7N65CYDTU-T

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TO-220F-3 (Y-Forming)

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FQPF7N65CYDTU-T

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1245 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	1.4Ohm @ 3.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220F-3 (Y-Forming)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	52W (Tc)
Series	QFET®
Package / Case	TO-220-3 Full Pack, Formed Leads
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	7A (Tj)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk