FQT1N80TF-WS

onsemi

Product No:

FQT1N80TF-WS

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Package:

SOT-223-3

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Description:

MOSFET N-CH 800V 200MA SOT223-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	7.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20Ohm @ 100mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	SOT-223-3
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	2.1W (Tc)
Series	QFET®
Package / Case	TO-261-3
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	FQT1N80