FQU12N20TU

Fairchild Semiconductor

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FQU12N20TU

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I-PAK

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Description:

MOSFET N-CH 200V 9A I-PAK

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	910 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	280mOhm @ 4.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	2.5W (Ta), 55W (Tc)
Series	QFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	9A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk