FQU2N60CTU

Fairchild Semiconductor

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FQU2N60CTU

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I-PAK

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Description:

POWER FIELD-EFFECT TRANSISTOR, 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.7Ohm @ 950mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	I-PAK
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	2.5W (Ta), 44W (Tc)
Series	QFET®
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk