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FQU8P10TU

Fairchild Semiconductor

Product No:

FQU8P10TU

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 6

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 530mOhm @ 3.3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 2.5W (Ta), 44W (Tc)
Series QFET®
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 6.6A (Tc)
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk