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HS8K1TB

Rohm Semiconductor

Product No:

HS8K1TB

Manufacturer:

Rohm Semiconductor

Package:

HSML3030L10

Batch:

-

Datasheet:

-

Description:

30V NCH+NCH POWER MOSFET

Quantity:

Delivery:

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Payment:

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Product Information

Parameter Info

User Guide

Operating Temperature 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 348pF @ 15V, 429pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 6nC @ 10V, 7.4nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 14.6mOhm @ 10A, 10V, 11.8mOhm @ 11A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 1mA
Supplier Device Package HSML3030L10
Drain to Source Voltage (Vdss) 30V
Series -
Package / Case 8-UDFN Exposed Pad
Technology MOSFET (Metal Oxide)
Power - Max 2W (Ta)
Mfr Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C 10A (Ta), 11A (Ta)
Package Tape & Reel (TR)
Base Product Number HS8K1