HS8MA2TCR1

Rohm Semiconductor

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HS8MA2TCR1

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Package:

DFN3333-9DC

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Description:

30V DUAL COMMON DRAIN PCH+NCH PO

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Operating Temperature	150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	320pF @ 10V, 365pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	7.8nC @ 10V, 8.4nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	DFN3333-9DC
Drain to Source Voltage (Vdss)	30V
Series	-
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	5A (Ta), 7A (Ta)
Package	Tape & Reel (TR)
Base Product Number	HS8MA2