HT8KE5TB1

Rohm Semiconductor

Product No:

HT8KE5TB1

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Package:

8-HSMT (3.2x3)

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Description:

100V 7A, DUAL NCH+NCH, HSMT8, PO

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Operating Temperature	150°C (TJ)
FET Feature	Standard
Configuration	2 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	90pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	2.9nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	193mOhm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)
Drain to Source Voltage (Vdss)	100V
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 13W (Tc)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	2.5A (Ta), 7A (Tc)
Package	Tape & Reel (TR)