HUFA75639S3ST

Fairchild Semiconductor

Product No:

HUFA75639S3ST

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Package:

D²PAK (TO-263AB)

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Description:

56A, 100V, 0.025OHM, N-CHANNEL,

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	25mOhm @ 56A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	D²PAK (TO-263AB)
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	200W (Tc)
Series	Automotive, AEC-Q101, UltraFET™
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	56A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	HUFA75