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IRF6201PBF

International Rectifier

Product No:

IRF6201PBF

Package:

8-SO

Batch:

-

Datasheet:

-

Description:

HEXFET POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8555 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs 195 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.45mOhm @ 27A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.1V @ 100µA
Supplier Device Package 8-SO
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 2.5W (Ta)
Series HEXFET®
Package / Case 8-SOIC (0.154", 3.90mm Width)
Technology MOSFET (Metal Oxide)
Mfr International Rectifier
Current - Continuous Drain (Id) @ 25°C 27A (Ta)
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Package Bulk