IRF7739L2TRPBF

International Rectifier

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IRF7739L2TRPBF

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DIRECTFET L8

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Description:

DIRECTFET POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	11880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	330 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1mOhm @ 160A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	DIRECTFET L8
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	3.8W (Ta), 125W (Tc)
Series	HEXFET®
Package / Case	DirectFET™ Isometric L8
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	46A (Ta), 375A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk