IRF820

Harris Corporation

Product No:

IRF820

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Package:

TO-220AB

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Description:

2.5A, 500V, 3.000 OHM, N-CHANNEL

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	315 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	17 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3Ohm @ 1.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	500 V
Power Dissipation (Max)	80W (Tc)
Series	PowerMESH™ II
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRF8