IRFD123

Harris Corporation

Product No:

IRFD123

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Package:

4-HVMDIP

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Description:

MOSFET N-CH 100V 1.3A 4DIP

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FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	360 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	270mOhm @ 780mA, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	4-HVMDIP
Drain to Source Voltage (Vdss)	100 V
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Package	Tube