IRFD220

Harris Corporation

Product No:

IRFD220

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Package:

4-DIP, Hexdip, HVMDIP

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Description:

0.8A 200V 0.800 OHM N-CHANNEL

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	800mOhm @ 480mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Drain to Source Voltage (Vdss)	200 V
Power Dissipation (Max)	1W (Ta)
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IRFD220