IRFD313

Harris Corporation

Product No:

IRFD313

Manufacturer:

Package:

4-DIP, Hexdip

Batch:

Datasheet:

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	135 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	7.5 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	5Ohm @ 200mA, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	4-DIP, Hexdip
Drain to Source Voltage (Vdss)	350 V
Power Dissipation (Max)	1W (Tc)
Series	-
Package / Case	4-DIP (0.300", 7.62mm)
Technology	MOSFET (Metal Oxide)
Mfr	Harris Corporation
Current - Continuous Drain (Id) @ 25°C	300mA (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk