IRFH4210DTRPBF

International Rectifier

Product No:

IRFH4210DTRPBF

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Package:

PQFN (5x6)

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Description:

HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4812 pF @ 13 V
Gate Charge (Qg) (Max) @ Vgs	77 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	1.1mOhm @ 50A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 100µA
Supplier Device Package	PQFN (5x6)
Drain to Source Voltage (Vdss)	25 V
Power Dissipation (Max)	3.5W (Ta), 125W (Tc)
Series	HEXFET®
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	44A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk
Base Product Number	IRFH4210