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IRFH5215TRPBF

International Rectifier

Product No:

IRFH5215TRPBF

Package:

PQFN (5x6)

Batch:

-

Datasheet:

-

Description:

HEXFET POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 58mOhm @ 16A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 100µA
Supplier Device Package PQFN (5x6)
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
Series HEXFET®
Package / Case 8-VQFN Exposed Pad
Technology MOSFET (Metal Oxide)
Mfr International Rectifier
Current - Continuous Drain (Id) @ 25°C 5A (Ta), 27A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Bulk