IRFH7921TRPBF-IR

International Rectifier

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IRFH7921TRPBF-IR

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PQFN (5x6) Single Die

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IRFH7921 - HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1210 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	14 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	8.5mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.35V @ 25µA
Supplier Device Package	PQFN (5x6) Single Die
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3.1W (Ta)
Series	HEXFET®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	15A (Ta), 34A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk