IRFHM8337TRPBF-IR

International Rectifier

Product No:

IRFHM8337TRPBF-IR

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Package:

8-PQFN-Dual (3.3x3.3), Power33

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Description:

MOSFET N-CH 30V 12A 8PQFN DL

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	755 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	8.1 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	12.4mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.35V @ 25µA
Supplier Device Package	8-PQFN-Dual (3.3x3.3), Power33
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.8W (Ta), 25W (Tc)
Series	HEXFET®
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	12A (Ta)
Vgs (Max)	±20V
Package	Bulk