IRFL024NPBF

International Rectifier

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IRFL024NPBF

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SOT-223

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HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	18.3 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	75mOhm @ 2.8A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	SOT-223
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	1W (Ta)
Series	HEXFET®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	2.8A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk