IRFP254BFP001

Fairchild Semiconductor

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IRFP254BFP001

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TO-3P

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Description:

25A, 250V, 0.14OHM, N-CHANNEL PO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	123 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	140mOhm @ 12.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-3P
Drain to Source Voltage (Vdss)	250 V
Power Dissipation (Max)	221W (Tc)
Series	-
Package / Case	TO-3P-3, SC-65-3
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk