Harris Corporation
Product No:
IRFU322
Manufacturer:
Package:
I-PAK
Batch:
-
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.7A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Supplier Device Package | I-PAK |
Drain to Source Voltage (Vdss) | 400 V |
Power Dissipation (Max) | 50W (Tc) |
Series | - |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Technology | MOSFET (Metal Oxide) |
Mfr | Harris Corporation |
Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Bulk |