IRL2203NPBF

International Rectifier

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IRL2203NPBF

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TO-220AB

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Description:

HEXFET POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 4.5 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	7mOhm @ 60A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	TO-220AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	180W (Tc)
Series	HEXFET®
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	116A (Tc)
Vgs (Max)	±16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk