IRLHM630TRPBF

International Rectifier

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IRLHM630TRPBF

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Package:

PQFN (3x3)

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Description:

IRLHM630 - 20V-100V N-CHANNEL SM

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 50µA
Supplier Device Package	PQFN (3x3)
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	2.7W (Ta), 37W (Tc)
Series	HEXFET®
Package / Case	8-VQFN Exposed Pad
Technology	MOSFET (Metal Oxide)
Mfr	International Rectifier
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 40A (Tc)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Package	Bulk