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ISL9N306AD3

Fairchild Semiconductor

Product No:

ISL9N306AD3

Package:

I-PAK

Batch:

-

Datasheet:

-

Description:

N-CHANNEL POWER MOSFET

Quantity:

Delivery:

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 6mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3V @ 250µA
Supplier Device Package I-PAK
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 125W (Ta)
Series UltraFET®
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Bulk