ISL9N318AD3ST

Fairchild Semiconductor

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ISL9N318AD3ST

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TO-263AB

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	900 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	18mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	TO-263AB
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	55W (Ta)
Series	UltraFET®
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk