IXFN50N120SIC

IXYS

Product No:

IXFN50N120SIC

Manufacturer:

Package:

SOT-227B

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Description:

SICFET N-CH 1200V 47A SOT227B

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	100 nC @ 20 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	50mOhm @ 40A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.2V @ 2mA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	-
Series	-
Package / Case	SOT-227-4, miniBLOC
Technology	SiCFET (Silicon Carbide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Vgs (Max)	+20V, -5V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	IXFN50