IXFN80N60P3

IXYS

Product No:

IXFN80N60P3

Manufacturer:

Package:

SOT-227B

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Description:

MOSFET N-CH 600V 66A SOT-227B

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	13100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	190 nC @ 10 V
Mounting Type	Chassis Mount
Rds On (Max) @ Id, Vgs	70mOhm @ 40A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 8mA
Supplier Device Package	SOT-227B
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	960W (Tc)
Series	HiPerFET™, Polar3™
Package / Case	SOT-227-4, miniBLOC
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	66A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFN80