IXFT32N100XHV

IXYS

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IXFT32N100XHV

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Package:

TO-268HV (IXFT)

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Description:

MOSFET N-CH 1000V 32A TO268HV

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4075 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	130 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	220mOhm @ 16A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	6V @ 4mA
Supplier Device Package	TO-268HV (IXFT)
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	890W (Tc)
Series	HiPerFET™, Ultra X
Package / Case	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IXFT32