IXTA1R6N100D2HV

IXYS

Product No:

IXTA1R6N100D2HV

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Package:

TO-263HV

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Description:

MOSFET N-CH 1000V 1.6A TO263HV

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Depletion Mode
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	645 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	10Ohm @ 800mA, 0V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 100µA
Supplier Device Package	TO-263HV
Drain to Source Voltage (Vdss)	1000 V
Power Dissipation (Max)	100W (Tc)
Series	Depletion
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	1.6A (Tj)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	0V
Package	Tube
Base Product Number	IXTA1