IXTD4N80P-3J

IXYS

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IXTD4N80P-3J

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Die

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Description:

MOSFET N-CH 800V 3.6A DIE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14.2 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.4Ohm @ 1.8A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	5.5V @ 100µA
Supplier Device Package	Die
Drain to Source Voltage (Vdss)	800 V
Power Dissipation (Max)	100W (Tc)
Series	PolarHV™
Package / Case	Die
Technology	MOSFET (Metal Oxide)
Mfr	IXYS
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk
Base Product Number	IXTD4N