NDC632P

Fairchild Semiconductor

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NDC632P

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SuperSOT™-6

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Description:

MOSFET P-CH 20V 2.7A SUPERSOT6

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	550 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	140mOhm @ 2.7A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1V @ 250µA
Supplier Device Package	SuperSOT™-6
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1.6W (Ta)
Series	-
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	2.7A (Ta)
Vgs (Max)	-8V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 4.5V
Package	Bulk