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NDP6020P

Fairchild Semiconductor

Product No:

NDP6020P

Package:

TO-220-3

Batch:

-

Datasheet:

-

Description:

POWER FIELD-EFFECT TRANSISTOR, 2

Quantity:

Delivery:

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Payment:

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In Stock : Please Inquiry

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Product Information

Parameter Info

User Guide

Operating Temperature -65°C ~ 175°C (TJ)
FET Feature -
FET Type P-Channel
Input Capacitance (Ciss) (Max) @ Vds 1590 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 5 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 50mOhm @ 12A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package TO-220-3
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 60W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Mfr Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Package Bulk
Base Product Number NDP602