NTD5862NT4G

onsemi

Product No:

NTD5862NT4G

Manufacturer:

Package:

DPAK

Batch:

Datasheet:

Description:

POWER FIELD-EFFECT TRANSISTOR, 9

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	82 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.7mOhm @ 45A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	115W (Tc)
Series	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	98A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk