NTGS5120PT1G

Cypress Semiconductor Corp

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NTGS5120PT1G

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6-TSOP

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Description:

NTGS51PFTSO62.111MO

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	942 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	18.1 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	111mOhm @ 2.9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	6-TSOP
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	600mW (Ta)
Series	Automotive, AEC-Q101
Package / Case	SOT-23-6 Thin, TSOT-23-6
Technology	MOSFET (Metal Oxide)
Mfr	Cypress Semiconductor Corp
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)