NTMSD2P102LR2

onsemi

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NTMSD2P102LR2

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Package:

8-SOIC

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Description:

MOSFET P-CH 20V 2.3A 8SOIC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	Schottky Diode (Isolated)
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	750 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 2.4A, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	710mW (Ta)
Series	FETKY™
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Vgs (Max)	±10V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)
Base Product Number	NTMSD2