NTR1P02LT1G

Fairchild Semiconductor

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NTR1P02LT1G

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Package:

SOT-23-3 (TO-236)

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Description:

SMALL SIGNAL FIELD-EFFECT TRANSI

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 5 V
Gate Charge (Qg) (Max) @ Vgs	5.5 nC @ 4 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	220mOhm @ 750mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.25V @ 250µA
Supplier Device Package	SOT-23-3 (TO-236)
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	400mW (Ta)
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	1.3A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Bulk