NVD5863NLT4G

onsemi

Product No:

NVD5863NLT4G

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Package:

DPAK

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Description:

MOSFET N-CH 60V 14.9A DPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3850 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7.1mOhm @ 41A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3.1W (Ta), 96W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	onsemi
Current - Continuous Drain (Id) @ 25°C	14.9A (Ta), 82A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	NVD586