NVD6416ANLT4G

Fairchild Semiconductor

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NVD6416ANLT4G

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DPAK

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Description:

MOSFET N-CH 100V 19A DPAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	74mOhm @ 19A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.2V @ 250µA
Supplier Device Package	DPAK
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	71W (Tc)
Series	Automotive, AEC-Q101
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Mfr	Fairchild Semiconductor
Current - Continuous Drain (Id) @ 25°C	19A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk