Home / Single FETs, MOSFETs / NVD6416ANLT4G-VF01
minImg

NVD6416ANLT4G-VF01

onsemi

Product No:

NVD6416ANLT4G-VF01

Manufacturer:

onsemi

Package:

DPAK-3

Batch:

-

Datasheet:

pdf.png

Description:

MOSFET N-CH 100V 19A DPAK-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Certif02 Certif07 Certif03 Certif04 Certif10

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 74mOhm @ 19A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package DPAK-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 71W (Tc)
Series Automotive, AEC-Q101
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Mfr onsemi
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number NVD6416