NX3008PBKMB,315

Nexperia USA Inc.

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NX3008PBKMB,315

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DFN1006B-3

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NEXPERIA NX3008PBKMB - SMALL SIG

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	46 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	0.72 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.1Ohm @ 200mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.1V @ 250µA
Supplier Device Package	DFN1006B-3
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	360mW (Ta), 2.7W (Tc)
Series	TrenchMOS™
Package / Case	SC-101, SOT-883
Technology	MOSFET (Metal Oxide)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Vgs (Max)	±8V
Package	Bulk