QS8M31TR

Rohm Semiconductor

Product No:

QS8M31TR

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Package:

TSMT8

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Description:

QS8M31 IS COMPLEX TYPE MOSFET(P+

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Operating Temperature	150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V, 750pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	4nC @ 5V, 7.2nC @ 5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA, 3V @ 1mA
Supplier Device Package	TSMT8
Drain to Source Voltage (Vdss)	60V
Series	-
Package / Case	8-SMD, Flat Lead
Technology	MOSFET (Metal Oxide)
Power - Max	1.1W (Ta)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	3A (Ta), 2A (Ta)
Package	Tape & Reel (TR)
Base Product Number	QS8M31