TPS1101DR

Texas Instruments

Product No:

TPS1101DR

Manufacturer:

Package:

8-SOIC

Batch:

Datasheet:

Description:

MOSFET P-CH 15V 2.3A 8SOIC

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	11.25 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	90mOhm @ 2.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	15 V
Power Dissipation (Max)	791mW (Ta)
Series	-
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Texas Instruments
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Vgs (Max)	+2V, -15V
Drive Voltage (Max Rds On, Min Rds On)	2.7V, 10V
Package	Tape & Reel (TR)
Base Product Number	TPS1101